| PART |
Description |
Maker |
| TM1-9 |
RF IMPEDANCE TRANSFORMER
|
SYNERGY MICROWAVE CORPORATI...
|
| TM4-4 |
RF IMPEDANCE TRANSFORMER
|
SYNERGY MICROWAVE CORPORATION
|
| 140REX |
IMPEDANCE MATCHING TRANSFORMER
|
List of Unclassifed Man...
|
| 2SK246 |
N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT/ IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SK246 |
Field Effect Transistor Silicon N Channel Junction Type For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications
|
TOSHIBA
|
| DPC-24-1000B20 DPC-10-1000B3 DPC-10-440B2 DPC-16-7 |
POWER TRANSFORMER, 24 VA
POWER TRANSFORMER, 10 VA
POWER TRANSFORMER, 4.4 VA
POWER TRANSFORMER, 1.2 VA
POWER TRANSFORMER, 1 VA
Low Frequency, Open-Style Laminated Concentric Vertical Profile, PC Plug-In Series
|
Pulse Electronics, Corp.
PULSE ELECTRONICS CORP
Pulse A Technitrol Company
Pulse A Technitrol Comp...
|
| DA2383-AL DA2383-ALD |
Flyback Transformer
PoE transformer, for NSC LM5071, 3.3V, SMT, RoHS SMPS TRANSFORMER
|
Coilcraft lnc.
Coilcraft, Inc.
|
| 2779H |
T1/E1 Transformer TELECOM TRANSFORMER
HIGH FREQUECY MAGNETICS T1/E1 Surface Mount Transformer
|
Bel Fuse, Inc.
BEL[Bel Fuse Inc.]
|
| 2SK246 2SK246GR 2SK246BL K246 2SK246Y |
N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT/ IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT, IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| 1812WBT-5LB 1812WBT-5LC 3SD 1812WBT-5LD 1812WBT2-3 |
Wideband RF transformer, SMT, RoHS 48 MHz - 645 MHz RF TRANSFORMER
4 MHz - 105 MHz RF TRANSFORMER
0.8 MHz - 23 MHz RF TRANSFORMER
|
Coilcraft, Inc.
COILCRAFT INC
|
